The low temperature dV/dI(V) characteristics are investigated for poin
t contacts of various sizes (d approximate to 2-35 nm) using a mechani
cally controlled breakjunction of a Kondo alloy CuFe (0.1 at. %), a si
ze effect, being manifested in an increase in the effective Kondo temp
erature with decreasing contact size, is found both on voltage and mag
netic field dV/dI dependences. In accordance with the prediction of th
e Zarand-Udvardi theory the enhancement of the Kondo temperature in th
e CuFe alloy appears to be quantitatively much smaller than in CuMn al
loy of the same concentration. This enhancement is due to the strong f
luctuations of the local electron density of states in the ultrasmall
metallic contacts. The Kondo temperature of a magnetic impurity provid
es a local probe of these fluctuations.