A THEORETICAL APPROACH TO THE IN1-XGAXP LPE GROWTH BY COMPUTER-SIMULATION TECHNIQUE

This paper presents a numerical model to calculate the layer thickness of InGaP crystals grown by the liquid phase epitaxial (LPE) technique as a function of different growth parameters such as time and tempera ture at cooling rates of 0.25, 0.5, and 1 K/min. The thickness of the grown layers is found to be cooling rate dependent whereas the solid c omposition is found to be independent of cooling rate. The concentrati on profiles of Ga and P atoms in In-rich melt at successive, equally s paced layers in front of an InGaP crystal have been constructed. The c oncentration gradient at the interface has been used to calculate the growth rate. Our model has been compared with reported experimental ob servations and the results are discussed in detail.