LATERAL GROWTH OF HIGHLY ORIENTED GRAPHITE BY CHEMICAL-VAPOR-DEPOSITION UPON PT FILM FORMED ON SAPPHIRE

Islands of highly oriented graphite were grown by chemical vapor depos ition at 900 degrees C upon a Pt film with initial thickness 50 nm for med on sapphire. The value of mosaic spread estimated from a rocking c urve for graphite (002) X-ray diffraction was 0.27 degrees which is sm aller than that of highly oriented pyrolytic graphite. Depth profiles of elements measured by Auger analyses indicated that dips appeared du ring chemical vapor deposition in the originally flat Pt film. The dep th profiles also indicated that the graphite islands grew within the d ips in the Pt film. It was found that the surface planes (110) and (00 1) of sapphire yield a better aligned graphite than (012).