ANISOTROPY OF ELECTRICAL-RESISTIVITY AND HOLE MOBILITY IN INTE SINGLE-CRYSTALS

The temperature dependences of the electrical resistivity and Hall mob ility of p-type InTe chain single crystals in parallel and perpendicul ar directions to c-axis have been investigated in the temperature rang e of 28-260 K. The high anisotropy between rho(parallel to) and rho(pe rpendicular to) which depends on temperature is attributed to high con centration of stacking faults due to weak interchain bonding. The mobi lity parallel to c-axis was found to vary with temperature as mu propo rtional to T-n where n = -0.6 due to hole scattering on polar optical phonons. The mobility perpendicular to c-axis above 140 K increases wi th temperature exponentially with an activation energy of 0.03 eV whic h is attributed to the hopping mechanism due to the barriers between t he chains.