LOW-TEMPERATURE BONDING OF EPITAXIAL LIFT-OFF DEVICES WITH AUSN

The increasing demand for more advanced optoelectronic integrated circ uits has created the need for bonding materials with different lattice constants (for example, GaAs on Si), In this paper, we report a new w ay for the bonding of epitaxial lift off (ELO) devices onto substrates , The multilayer structures investigated in this work produce a result ing AuSn alloy with approximately 84 wt.% gold, but can be bonded with a peak temperature of 235 degrees C, The bonded samples were investig ated with several standard surface analysis techniques like optical mi croscopy, scanning electron microscopy (SEM), and energy dispersive X- ray analysis (EDX) as well as mechanical tests, The results of oar res earch allowed us to optimize the layer structure, the bonding paramete rs as well as the diffusion barriers.