HIGH Q-FACTOR INDUCTORS INTEGRATED ON MCM SI SUBSTRATES

High quality factor (Q) inductors were designed and fabricated on high -resistivity (2000 Omega . cm) Si substrates with multichip module (MC M) fabrication technology. A Q-factor of 30 was achieved for an induct or of 4 nH at 1-2 GHz, To enhance the Q-factor and reduce the parasiti c coupling capacitance, a staggered double metal-layered structure was utilized by taking advantage of the double-layered metal lines in MCM , With electromagnetic simulation tools, computer-aided analysis was u sed to optimize the device characteristics. The skin effect and the lo ssy substrate effect on the performance of the radio frequency (RF) th in-film inductors were studied, The fabrication process used polyimide as the dielectric layer and aluminum as the metal layer, The use of t he low dielectric-constant material, polyimide, reduces the parasitic coupling capacitance between metal lines and increases the quality fac tor and the self-resonant frequency for the RF integrated inductors.