D. Routkevitch et al., ELECTROCHEMICAL FABRICATION OF CDS NANOWIRE ARRAYS IN POROUS ANODIC ALUMINUM-OXIDE TEMPLATES, Journal of physical chemistry, 100(33), 1996, pp. 14037-14047
A technique is described for fabricating arrays of uniform CdS nanowir
es with lengths up to 1 mu m and diameters as small as 9 nm by electro
chemically depositing the semiconductor directly into the pores of ano
dic aluminum oxide films from an electrolyte containing Cd2+ and S in
dimethyl sulfoxide. The nanowire arrays were characterized by powder X
-ray diffraction (XRD) and electron microscopy. The deposited material
is found to be hexagonal CdS with the crystallographic c-axis prefere
ntially oriented along the length of the pore. The effects of annealin
g on the crystallinity of the deposited semiconductor were investigate
d by XRD and resonance Raman spectroscopy. The deposition technique is
, in principle, generalizable as a means of fabricating nanowires of a
wide range of semiconductors.