P. Schneider et al., FOCUSED ION-BEAM SPUTTERING YIELD MEASUREMENTS FOR COBALT IONS ON SILICON AND RELATED MATERIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(1-2), 1996, pp. 77-80
The sputtering yield of crystalline, amorphous, and poly-silicon, as w
ell as SiO2 and SiC, was investigated for 35 keV Co+ focused ion beam
irradiation using the volume loss method. The sputtered holes were ana
lysed by SEM and surface profiling. For crystalline silicon targets, t
he sputtering yield was determined as a function of the incident angle
of the ions and substrate temperature.