FOCUSED ION-BEAM SPUTTERING YIELD MEASUREMENTS FOR COBALT IONS ON SILICON AND RELATED MATERIALS

Authors
SCHNEIDER P BISCHOFF L TEICHERT J HESSE E
Citation
P. Schneider et al., FOCUSED ION-BEAM SPUTTERING YIELD MEASUREMENTS FOR COBALT IONS ON SILICON AND RELATED MATERIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(1-2), 1996, pp. 77-80
Citations number
18
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
117
Issue
1-2
Year of publication
1996
Pages
77 - 80
Database
ISI
SICI code
0168-583X(1996)117:1-2<77:FISYMF>2.0.ZU;2-P
Abstract
The sputtering yield of crystalline, amorphous, and poly-silicon, as w ell as SiO2 and SiC, was investigated for 35 keV Co+ focused ion beam irradiation using the volume loss method. The sputtered holes were ana lysed by SEM and surface profiling. For crystalline silicon targets, t he sputtering yield was determined as a function of the incident angle of the ions and substrate temperature.