PHOTOLUMINESCENCE AND ACTIVATION ON SI-GAAS BY SI+ IMPLANTATION AND FOLLOWING RAPID THERMAL ANNEALING

Authors
LI GH WANG CH ZHAO J WANG ZG WAN SK
Citation
Gh. Li et al., PHOTOLUMINESCENCE AND ACTIVATION ON SI-GAAS BY SI+ IMPLANTATION AND FOLLOWING RAPID THERMAL ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(1-2), 1996, pp. 112-116
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
117
Issue
1-2
Year of publication
1996
Pages
112 - 116
Database
ISI
SICI code
0168-583X(1996)117:1-2<112:PAAOSB>2.0.ZU;2-J
Abstract
Photoluminescence (PL) and electrical characteristics of SI-GaAs, Si+- implanted and following rapid thermal annealing (RTA), were investigat ed, The PL spectra of Si-GA-C-As, Ga-i-Si-As, and V-As-Si-As were obta ined. This paper concentrates on the PL peak at 1.36 eV which was prov en as an emission of the Si-Ga-V-Ga combination by Si+ + P+ dual impla ntation. The results indicate that the peak at 1.36 eV appears when th e ratio of As:Ga increased during the processing. Also high activation was obtained for the sample under the same conditions. More discussio n on the mechanism of Si+ implanted SI-GaAs has been made based on the Morrow model [J. Appl. Phys, 64 (1988) 1889].