ELECTRICAL CHARACTERISTICS OF GAAS IMPLANTED WITH 70 MEV SN-120 IONS

Electrical behavior of n-GaAs substrates implanted with 70 MeV Sn-120 ions has been investigated after annealing over a temperature range of 450-850 degrees C. The resistance values are found to increase with i ncreasing annealing temperature up to 650 degrees C and then decrease for higher annealing temperatures. The resistance of 450 degrees C ann ealed sample is dominated by defect hopping conduction below room temp erature. Above room temperature the electrical transport is dominated by carriers in the extended states, particularly after annealing at hi gh temperatures. The sample annealed at 850 degrees C shows I-V charac teristics typical of a p-n junction, indicating a p-type conductivity in the implanted layer.