ION-BEAM DEFECT ENGINEERING IN SEMICONDUCTORS AND OPTOELECTRIC MATERIALS

Authors
WANG ZL ZHAO QT WANG KM SHI BR
Citation
Zl. Wang et al., ION-BEAM DEFECT ENGINEERING IN SEMICONDUCTORS AND OPTOELECTRIC MATERIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 115(1-4), 1996, pp. 421-429
Citations number
50
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
115
Issue
1-4
Year of publication
1996
Pages
421 - 429
Database
ISI
SICI code
0168-583X(1996)115:1-4<421:IDEISA>2.0.ZU;2-T
Abstract
In this paper, the recent progress and applications of ion beam defect engineering (IBDE) are reported. IBDE in silicon shows that it can be used for (1) the reduction of secondary defects created by the dopant -ion implantation, (2) the gettering of F atoms from the B doped regio ns in BF2 implanted silicon; (3) the reduction of B diffusion in BF2 i mplanted silicon. IBDE applications in optoelectric crystals are also investigated. Waveguide can be formed in LiNbO3 by MeV Cu ion implanta tion and in KTiOPO4 (KTP) by multi-energy (MeV) He ion implantation. M echanisms and trends of IBDE in the future are also discussed.