Ff. Komarov et al., SIMULATION OF ION-BEAM-ASSISTED DEPOSITION OF LAYERS ON METALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 115(1-4), 1996, pp. 505-507
The numerical simulation of high-intensive implantation of N-2(+) ions
in Fe with energy 90 keV and total doses varied from 1 X 10(16) to 1
X 10(17) ions/cm(2) with simultaneous titanium deposition has been car
ried out. The rate of the titanium layer growth has been taken to be 5
X 10(-8) cm/s and 1 X 10(-8) cm/s. The simulation code has been creat
ed on the basis of transport equations. The model takes into account p
henomena of sputtering and swelling of target, variation of the stoppi
ng properties of target material in time and depth, radiation enhanced
diffusion of impurity and formation of new phases. The process of con
tinuous deposition from ion plasma accompanied by ion irradiation has
been numerically simulated as the ion implantation into a two-layered
target with the surface boundary moving towards the ion beam. The mode
l allows to choose the optimal density of ion current, dose and deposi
tion rate in order to improve tribological and mechanical properties o
f the film/metal system. Conclusions have been made about the characte
r of the processes occurring during ion beam assisted deposition of ti
tanium layers on iron.