MOLECULAR-DYNAMICS SIMULATION OF ION RANGES AT KEV ENERGIES

We present an efficient molecular dynamics method for calculating ion ranges and deposited energies in the recoil energy region 100 eV to 10 0 keV. The method overcomes some of the drawbacks of the binary collis ion approximation methods conventionally used to calculate ion ranges. We describe principles by which one can simulate implantation into po lycrystalline materials, and study the effect of the crystal structure on the ion range. Application of the simulation method to practical c ases is demonstrated by analyzing experimental range results of 50 keV silicon self-ion-implantation measured at our laboratory.