Detectors of infrared radiation in the 8-12 mu m wavelength range have
been made of metal-semiconductor composites consisting of Ag-particle
s 10-100 nm in size dispersed throughout an n-type CuInSe2 matrix. Mod
est values of D = 0.8 x 10(6) cm Hz(1/2) W-1 and voltage responsivity
R(v) = 1 x 10(2) V/W are encouraging preliminary results for these no
noptimized thin (approximate to 500 nm) film structures.