PREPARATION AND DIELECTRIC CHARACTERISTICS OF SRBI2TA2O9 CERAMICS

Authors
YANG JS CHEN XM
Citation
Js. Yang et Xm. Chen, PREPARATION AND DIELECTRIC CHARACTERISTICS OF SRBI2TA2O9 CERAMICS, Materials letters, 29(1-3), 1996, pp. 73-75
Citations number
5
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
29
Issue
1-3
Year of publication
1996
Pages
73 - 75
Database
ISI
SICI code
0167-577X(1996)29:1-3<73:PADCOS>2.0.ZU;2-S
Abstract
SrBi2Ta2O9 ceramics with layer-type bismuth structure were synthesized by a solid state reaction process, and the densification characterist ics were determined together with the electric properties. SrBi2Ta2O9 ceramics sintered at 1300 degrees C showed a high Curie point peak of 1100 at 327 degrees C, high room temperature dielectric constant and l ow dielectric loss.