TI-N THIN-LAYER DEPOSITION USING THE MAGNETRON DISCHARGE

Authors
ANITA V LUCA D HODOROABA V POPA G
Citation
V. Anita et al., TI-N THIN-LAYER DEPOSITION USING THE MAGNETRON DISCHARGE, Vacuum, 47(9), 1996, pp. 1103-1104
Citations number
4
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
47
Issue
9
Year of publication
1996
Pages
1103 - 1104
Database
ISI
SICI code
0042-207X(1996)47:9<1103:TTDUTM>2.0.ZU;2-4
Abstract
Current-voltage characteristics were registered for reactive magnetron discharge in argon-nitrogen gas mixture and titanium target. There is an important changing of the characteristics vs ratio of partial pres sure of the nitrogen and the argon buffer gas which might be used as a n identification for transition from the nitride mode to the metallic mode of Ti deposition. Copyright (C) 1996 Elsevier Science Ltd.