CHARACTERIZATION OF BIAS ENHANCED MWCVD DIAMOND THIN-FILMS

Diamond films deposited by MWCVD (microwave assisted chemical vapor de position) after bias enhanced nucleation have been characterized by Ra man spectroscopy (RS), scanning electron microscopy (SEM) and electric measurements. The diamond/graphite ratio in the films, as measured by RS and verified by electric measurements, depends on the methane conc entration during the growth step and the temperature in the bias stage , The higher the diamond content in the films, the better dielectric p roperties they exhibit. The de conductivity of these films is always l ower than those measured in films grown on scratched substrates. Thus, diamond films with low de conductivities, similar to natural diamond, could be deposited choosing the appropriate bias nucleation condition s.