ELECTRONIC-STRUCTURE OF RHOMBOHEDRAL TI2O3

Authors
Citation
Lf. Mattheiss, ELECTRONIC-STRUCTURE OF RHOMBOHEDRAL TI2O3, Journal of physics. Condensed matter, 8(33), 1996, pp. 5987-5995
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
8
Issue
33
Year of publication
1996
Pages
5987 - 5995
Database
ISI
SICI code
0953-8984(1996)8:33<5987:EORT>2.0.ZU;2-X
Abstract
The band properties of corundum-phase Ti2O3 have been calculated in th e local-density approximation with the use of the linear augmented-pla ne-wave method. The results consist of low-lying O 2p states and a par tially filled t(2g) complex near E(F) where metallic behaviour origina tes from overlapping a(1g) and e(g)(pi) subbands. Decreasing the c/a r atio (even beyond the observed low-temperature value) reduces but does not eliminate this a(1g)-e(g)(pi) band overlap, thereby precluding a band explanation for the metal-insulator transition that is observed i n this system with no accompanying structural distortion.