THERMOLUMINESCENCE, POINT-DEFECTS AND RECOMBINATION PROCESSES IN BEO AND LIB3O5 SINGLE-CRYSTALS

Results of the TSL study of the main dosimetric peak region from BeO s ingle crystals doped with boron or lithium impurities in different con centrations are presented. The TSL peculiarities at 420 K were interpr eted in terms of the field fluctuation process model. It was suggested that in BeO over the region betwen 380 K and 420 K the thermostimulat ed lattice process occurs, decreases the potential barrier of a portio n of the B2+ centres and results in over-thermal emission. It was foun d that a small concentration of the hole trapped [Li](0) centres effec tively suppresses the over-thermal emission. TSL from LiB3O5 single cr ystals and temperature dependence of the activation energy [E](T) were studied. The kinetics pecularities of TSL over the range from 100 to 130 K were revealed and interpreted as a lattice process, which decrea ses the potential barrier of the actual trapping centres.