FORMATION ENERGIES AND CHARGE STATES OF NATIVE DEFECTS IN GAAS - A SELECTED COMPILATION FROM THE LITERATURE

Formation energies, binding energies and reaction energies of native d efects in GaAs, calculated by several authors, are combined To yield a set of formation energies of native point defects and their complexes as functions of the Fermi level in the bandgap. As an illustration th e results are used to confirm the stability of the AsGaVAsVGa complex against decay via several channels.