Km. Luken et Ra. Morrow, FORMATION ENERGIES AND CHARGE STATES OF NATIVE DEFECTS IN GAAS - A SELECTED COMPILATION FROM THE LITERATURE, Semiconductor science and technology, 11(8), 1996, pp. 1156-1158
Formation energies, binding energies and reaction energies of native d
efects in GaAs, calculated by several authors, are combined To yield a
set of formation energies of native point defects and their complexes
as functions of the Fermi level in the bandgap. As an illustration th
e results are used to confirm the stability of the AsGaVAsVGa complex
against decay via several channels.