ELECTROLUMINESCENCE OF GAINSB GASB STRAINED SINGLE-QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/

Authors
BARANOV AN CUMINAL Y BOISSIER G NICOLAS JC LAZZARI JL ALIBERT C JOULLIE A
Citation
An. Baranov et al., ELECTROLUMINESCENCE OF GAINSB GASB STRAINED SINGLE-QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 11(8), 1996, pp. 1185-1188
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
8
Year of publication
1996
Pages
1185 - 1188
Database
ISI
SICI code
0268-1242(1996)11:8<1185:EOGGSS>2.0.ZU;2-K
Abstract
GaSb-based heterostructures with strained-layer GaSb/Ga1-xInxSb(x = 0. 26 or x = 0.35) single quantum wells and Al0.5Ga0.5Sb cladding layers were grown by molecular beam epitaxy. The thickness of the GalnSb well was varied from 3.0 to 14.5 nm. Intense room-temperature electrolumin escence was observed from mesa diodes with peak emission wavelengths i n the 1.9-2.2 mu m spectral range. The dependence of emission energy o n well thickness is consistent with the predictions obtained by an eff ective mass treatment assuming a rectangular type I quantum well and a conduction band offset Delta E(c) = 0.6 Delta E(g).