GENERALIZED-APPROACH TO THE PARAMETER EXTRACTION FROM I-V CHARACTERISTICS OF SCHOTTKY DIODES

Two approaches for Schottky barrier parameter evaluation are presented and compared. The first method extracts the barrier height, the ideal ity factor and the series resistance also for the structures that have no linear part in the forward direction of the In I-V curve. This ena bles one to take into consideration also the reverse part of I-V curve s that is normally omitted and the information lost. The second, more general, approach takes into account an inhomogeneity of the Schottky barrier and extracts the parameters of the barrier height distribution . It is shown that for this case it is possible to substitute the idea lity factor, which is a non-physical parameter, by a barrier height di stribution with the mean value phi(0) and the standard deviation sigma . Using this method a single I-V measurement is sufficient for determi ning the barrier height distribution.