FABRICATION AND ELECTRICAL-PROPERTIES OF LEAD-ZIRCONATE-TITANATE THICK-FILMS

Thick films of lead zirconate titanate of the morphotropic phase bound ary composition, Pb(Zr0.52Ti0.48)O-3, have been fabricated on platinum -buffered silicon using a modified sol-gel spin-coating technique, Cra ck-free films of 12-mu m thickness can be uniformly deposited on 3-in. -diameter wafers with high yield and properties comparable to those of bulk ceramics, The thickness dependence of film structure and the die lectric, ferroelectric, and piezoelectric properties have been charact erized over the thickness range of 1-12 mu m. A strong (100) texture d evelops as film thickness increases above 5 mu m; the films were marke d by saturation values of longitudinal piezoelectric coefficient d(33) , 340 pC/N; remanent polarization, 27 mu C/cm(2); and dielectric permi ttivity, 1450, PZT films in this thickness range are extremely well-su ited to application as electromechanical transduction media in silicon -based microelectromechanical systems (MEMS).