SYNTHESIS, CRYSTAL-STRUCTURE, ELECTRONIC-STRUCTURE, AND PROPERTIES OFHF2IN5, A METALLIC HAFNIDE WITH ONE-DIMENSIONAL HF-HF AND 2-DIMENSIONAL IN-IN BONDING

Citation
R. Pottgen et R. Dronskowski, SYNTHESIS, CRYSTAL-STRUCTURE, ELECTRONIC-STRUCTURE, AND PROPERTIES OFHF2IN5, A METALLIC HAFNIDE WITH ONE-DIMENSIONAL HF-HF AND 2-DIMENSIONAL IN-IN BONDING, Chemistry, 2(7), 1996, pp. 800-804
Citations number
48
Categorie Soggetti
Chemistry
Journal title
ISSN journal
09476539
Volume
2
Issue
7
Year of publication
1996
Pages
800 - 804
Database
ISI
SICI code
0947-6539(1996)2:7<800:SCEAPO>2.0.ZU;2-H
Abstract
Hf2In5-previously reported with the tentative composition ''Hf3In4''-w as prepared from the elements in a tantalum tube at 970 K. The X-ray d iffractional characterization by means of single-crystal refinement re veals the presence of a tetragonal structure (a = 1024.71(9), c = 305. 66(3) pm, P4/mbm, Z = 2) of Mn2Hg5 type. Hf2In5 is Pauli-paramagnetic and good metallic conductor. Quasi-relativistic semiempirical and scal ar-relativistic ab initio band structure calculations reveal Hf2In5, t o be a hafnide, composed of a two-dimensional indium network threaded by infinite hafnium chains. The amount of In-In bonding scales counter intuitively with the interatomic distances.