PRESSURE-INDUCED PHONON SOFTENING AND ELECTRONIC TOPOLOGICAL TRANSITION IN HGBA2CUO4

Citation
Jj. Yu et al., PRESSURE-INDUCED PHONON SOFTENING AND ELECTRONIC TOPOLOGICAL TRANSITION IN HGBA2CUO4, Journal of the Korean Physical Society, 29, 1996, pp. 46-50
Citations number
35
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
29
Year of publication
1996
Supplement
S
Pages
46 - 50
Database
ISI
SICI code
0374-4884(1996)29:<46:PPSAET>2.0.ZU;2-A
Abstract
Results of total energy local density calculations for the effect of p ressure on the lattice parameters, bond lengths, electronic structure and A(1g) phonon frequency in HgBa2CuO4 have been carried out. The eff ects of pressure on the frequency of the apical-oxygen (O-A) A(1g) pho non in the Hg-O-A-Cu bonds are studied in order to understand the role of pressure in increasing T-c of mercury-based superconductors. Theor etically determined zero pressure lattice parameters and phonon freque ncies are in good agreement with experiments. An electronic topologica l transition that occurs when the van Hove singularity is shifted clos e to the vicinity of E(F) by pressure causes considerable phonon softe ning and anomalous behavior of c-axis length, the Hg-O-A bond and Ba z -coordinate.