DESIGN, MODELING, AND CHARACTERIZATION OF MONOLITHICALLY INTEGRATED INP-BASED (1.55-MU-M) HIGH-SPEED (24GB S) P-I-NMBT FRONT-END PHOTORECEIVERS/

High-speed, long-wavelength InAlAs/InGaAs OEIC photoreceivers based on a p-i-n/HBT shared layer integration scheme have been designed, fabri cated and characterized. The p-i-n photodiodes, formed with the 6000 A ngstrom-thick InGaAs pre-collector layer of the HBT as the absorbing l ayer, exhibited a responsivity of similar to 0.4 A/W and a -3 dB optic al bandwidth larger than 20 GHz at lambda = 1.55 mu m. The fabricated three-stage transimpedance amplifier with a feedback resistor of 550 O mega demonstrated a transimpedance gain of 46 dB Omega and a -3 dB ban dwidth of 20 GHz. The monolithically integrated photoreceiver with a 8 3 mu m(2) p-i-n photodiode consumed a small de power of 35 mW and demo nstrated a measured -3 dB optical bandwidth of 19.5 GHz, which is the highest reported to date for an InAlAs/InGaAs integrated front-end pho toreceiver. The OEIC photoreceiver also has a measured input optical d ynamic range of 20 dB. The performance of individual devices and integ rated circuits was also investigated through detailed CAD-based analys is and characterization. Transient simulations, based on a HSPICE circ uit model and previous measurements of eye diagrams for a NRZ 2(31)-1 pseudorandom binary sequence (PRBS), show that the OEIC photoreceiver is capable of operation up to 24 Gb/s.