ULTRAFAST, DUAL-DEPLETION REGION, INGAAS INP P-I-N DETECTOR/

The design of a new kind of photodetector, the dual-depletion region p -i-n photodetector, is presented. This vertical detector has a parasit ic capacitance and transit time that can be controlled semi-independen tly. This eases the classical tradeoff between these two speed limitin g factors, allowing the design of large, fast detectors. A theoretical analysis of the transit time effect and the capacitance effect is mad e. This analysis is then used to compute optimum design parameters.