ULTRAFAST, DUAL-DEPLETION REGION, INGAAS INP P-I-N DETECTOR/

Citation
Fj. Effenberger et Am. Joshi, ULTRAFAST, DUAL-DEPLETION REGION, INGAAS INP P-I-N DETECTOR/, Journal of lightwave technology, 14(8), 1996, pp. 1859-1864
Citations number
11
Categorie Soggetti
Optics
ISSN journal
07338724
Volume
14
Issue
8
Year of publication
1996
Pages
1859 - 1864
Database
ISI
SICI code
0733-8724(1996)14:8<1859:UDRIIP>2.0.ZU;2-B
Abstract
The design of a new kind of photodetector, the dual-depletion region p -i-n photodetector, is presented. This vertical detector has a parasit ic capacitance and transit time that can be controlled semi-independen tly. This eases the classical tradeoff between these two speed limitin g factors, allowing the design of large, fast detectors. A theoretical analysis of the transit time effect and the capacitance effect is mad e. This analysis is then used to compute optimum design parameters.