LEEM STM STUDIES OF NONREACTIVE AND REACTIVE GROWTH ON SILICON SURFACES/

Authors
TSONG IST
Citation
Ist. Tsong, LEEM STM STUDIES OF NONREACTIVE AND REACTIVE GROWTH ON SILICON SURFACES/, Surface review and letters, 3(2), 1996, pp. 1305-1314
Citations number
24
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
Surface review and letters → ACNP
ISSN journal
0218625X
Volume
3
Issue
2
Year of publication
1996
Pages
1305 - 1314
Database
ISI
SICI code
0218-625X(1996)3:2<1305:LSSONA>2.0.ZU;2-U
Abstract
The nucleation and growth behavior of two very different systems are s tudied by low-energy electron microscopy (LEEM) and scanning tunneling microscopy (STM). The first is a nonreactive system of Pb growth on t he Si(100) surface at room temperature and the second is a reactive sy stem in which nitride layers are formed on Si(111) during reaction wit h NH3 at high temperatures. In both cases, the mobilities of the diffu sing species have a strong influence on the resulting growth morpholog ies.