VISIBLE LASER-DIODES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY (MOVPE)

Authors
ROBERTS JS HAMILTON CJ MCILVANEY K MARSH JH
Citation
Js. Roberts et al., VISIBLE LASER-DIODES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY (MOVPE), Electronics Letters, 32(16), 1996, pp. 1491-1493
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
16
Year of publication
1996
Pages
1491 - 1493
Database
ISI
SICI code
0013-5194(1996)32:16<1491:VLGBMV>2.0.ZU;2-Z
Abstract
Visible (682nm) InAlGaAs oxide stripe lasers have been fabricated on a tmospheric pressure MOVPE grown material. Lowering the oxygen residue of the metal organic reagents allows uniform deposition of high optica l quality InAlGaAs QWs at similar to 600 degrees C. A separate confine ment heterostructure laser using a single QW lased at room temperature with J(infinity) of 1.23kAcm(-2).