THERMAL EFFECTS IN HBT EMITTER RESISTANCE EXTRACTION

Authors
HANINGTON G CHANG CE ZAMPARDI PJ ASBECK PM
Citation
G. Hanington et al., THERMAL EFFECTS IN HBT EMITTER RESISTANCE EXTRACTION, Electronics Letters, 32(16), 1996, pp. 1515-1516
Citations number
2
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
16
Year of publication
1996
Pages
1515 - 1516
Database
ISI
SICI code
0013-5194(1996)32:16<1515:TEIHER>2.0.ZU;2-3
Abstract
It is shown that device self-heating effects introduce a significant e rror in the determination of emitter resistance in AlGaAs/GaAs HBTs by the common technique of extrapolating 1/g(m) against 1/I-c (where g(m ) is the observed device transconductance). An approximate expression for the error is given, and an improved technique for R(e) extraction is presented.