ELECTRODE INTERFACE EFFECTS ON INDIUM-TIN-OXIDE POLYMER METAL LIGHT-EMITTING-DIODES/

Authors
GAUTIER E LORIN A NUNZI JM SCHALCHLI A BENATTAR JJ VITAL D
Citation
E. Gautier et al., ELECTRODE INTERFACE EFFECTS ON INDIUM-TIN-OXIDE POLYMER METAL LIGHT-EMITTING-DIODES/, Applied physics letters, 69(8), 1996, pp. 1071-1073
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
8
Year of publication
1996
Pages
1071 - 1073
Database
ISI
SICI code
0003-6951(1996)69:8<1071:EIEOIP>2.0.ZU;2-F
Abstract
A spin-coated doped-polymer light emitting diode is studied. Blue elec troluminescence decays within 1 h. X-ray reflectivity analysis of the aged diode shows the formation of an interfacial layer made of the ITO semitransparent electrode indiffused into the polymer. X-ray reflecti vity stands as a powerful tool for aging studies of organic semiconduc ting devices. (C) 1996 American Institute of Physics.