EFFECT OF CEO2 INTERLAYER DEPOSITION TEMPERATURE ON GROWTH-BEHAVIOR OF BI4TI3O12 CEO2/MGO HETEROSTRUCTURES/

Authors
JO W PARK GW KIM DW NOH TW
Citation
W. Jo et al., EFFECT OF CEO2 INTERLAYER DEPOSITION TEMPERATURE ON GROWTH-BEHAVIOR OF BI4TI3O12 CEO2/MGO HETEROSTRUCTURES/, Applied physics letters, 69(8), 1996, pp. 1077-1079
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
8
Year of publication
1996
Pages
1077 - 1079
Database
ISI
SICI code
0003-6951(1996)69:8<1077:EOCIDT>2.0.ZU;2-4
Abstract
CeO2 interlayers were used to control growth behavior of Bi4Ti3O12 thi n films on Mg0(001) substrates. The CeO2 layer grown at 740 degrees C had a preferential orientation with its c-axis normal to the film surf ace, so it could be used to grow an epitaxial Bi4Ti3O12(001)/CeO2(001) /MgO(001) heterostructure. On the other hand, the CeO2 layer grown at 650 degrees C showed a mixed texture of (001) and (111), and this inte rlayer enabled us to get a preferentially oriented B4Ti3O12(117)/CeO2( 111)MgO(001) multilayer structure. (C) 1996 American Institute of Phys ics.