PHOTOEXCITED CARRIER DYNAMICS IN INALGAAS INP QUANTUM-WELL LASER STRUCTURES/

Experimental investigations of carrier transport and capture into quan tum wells are performed for InAlGaAs/InP laser structures. Time-resolv ed photoluminescence measurements are made by upconversion technique. The characteristic times for the ambipolar carrier transport in the co nfinement region and the electron capture into the quantum wells are a bout 2-5 and 1 ps, respectively. The obtained results show a good pote ntial for high-speed InAlGaAs/InP quantum well lasers operating in the 1.5 mu m spectral region. (C) 1996 American Institute of Physics.