ELECTRONIC DIFFUSIVITY MEASUREMENT IN SILICON BY PHOTOTHERMAL MICROSCOPY

In this letter we demonstrate that a photothermal microscopy experimen t can be used to determine the electronic diffusivity (or carrier mobi lity) in the same way it is now widely used to measure locally thermal diffusivity of various nonsemiconductor materials. The main difficult y lies in the fact that in order to separate thermal and carrier diffu sion, the experiment must be performed for a relatively large distance between the pump and probe beams. Photothermal signals are therefore rather weak and great experimental care must be taken. We present and discuss experimental results on Si. (C) 1996 American Institute of Phy sics.