SELF-INDUCED PERSISTENT PHOTOCONDUCTIVITY IN RESONANT-TUNNELING DEVICES

Citation
Bra. Neves et al., SELF-INDUCED PERSISTENT PHOTOCONDUCTIVITY IN RESONANT-TUNNELING DEVICES, Applied physics letters, 69(8), 1996, pp. 1125-1127
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
8
Year of publication
1996
Pages
1125 - 1127
Database
ISI
SICI code
0003-6951(1996)69:8<1125:SPPIRD>2.0.ZU;2-O
Abstract
We report on the observation of a novel effect in resonant tunneling d evices (RTD): a self-induced persistent photoconductivity (SIPPC). The SIPPC manifests itself as a permanent shift of the resonant peak posi tion to lower voltages, which is induced by the RTD itself and not by external sources. The SIPPC is due to the presence of DX centers in th e device, which are ionized by light generated in the device itself th rough the recombination of electron-hole pairs created by impact ioniz ation of hot electrons in the depletion layer of the device. (C) 1996 American Institute of Physics.