The origin of stressing polarity dependence of charge-to-breakdown, Q(
bd), in thin SiO2 is discussed based on the temperature dependence of
Q(bd) for both stressing polarities using wet and dry oxides. It was f
ound that the temperature dependence of Q(bd), which increases with de
creasing temperature in the high temperature region and tends to satur
ate in the low temperature region, is identical irrespective of the st
ressing polarity and the oxidation condition. It has been proposed tha
t the strain gradient from Si/SiO2 interface to SiO2/gate electrode in
terface determines directly both the Si-H bond density which dominates
Q(bd) in high temperature region and the strained Si-O bond density w
hich dominates Q(bd) in the low temperature region, irrespective of ga
te polarity and of oxidation condition. (C) 1996 American Institute of
Physics.