CCL4-DOPED SEMIINSULATING INP AS A BUFFER LAYER IN GAINAS INP HIGH-ELECTRON-MOBILITY TRANSISTORS/

Authors
HSU CC YANG YF OU HJ YANG ES
Citation
Cc. Hsu et al., CCL4-DOPED SEMIINSULATING INP AS A BUFFER LAYER IN GAINAS INP HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 69(8), 1996, pp. 1143-1144
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
8
Year of publication
1996
Pages
1143 - 1144
Database
ISI
SICI code
0003-6951(1996)69:8<1143:CSIAAB>2.0.ZU;2-7
Abstract
The application of CCl4-doped semi-insulating InP as a buffer layer in a pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor (HEMT) grown by metalorganic chemical vapor deposition is reported. This Al-free InP-base HEMT with a gate length of 1.3 mu m ha s extrinsic transconductances of 420 and 610 mS/mm at 300 and 77 K, re spectively. A cutoff frequency of 15 GHz and a maximum oscillation fre quency of 40 GHz are obtained. The results demonstrate the CCL(4)-dope d semi-insulating InP is a promising buffer layer for InP-based HEMT. (C) 1996 American Institute of Physics.