A. Anane et al., ENHANCEMENT OF THE MAGNETO RESISTANCE DUE TO STRUCTURAL TRANSITION INMG-DOPED PEROVSKITE MN OXIDES, Applied physics letters, 69(8), 1996, pp. 1160-1162
Substitution of magnesium for manganese in mixed perovskite La1-xSrxMn
O3 was found to reduce the electrical conductivity and the Curie temer
ature T-c. A remarkable jump in the resistivity rho was observed in th
e 6% Mg-doped crystal with x = 0.175. This sample remains semiconducti
ng at low temperatures, contrary to the Mg-free crystal. The abrupt ch
ange of rho reflects a first-order structural transition at a temperat
ure T-s just below T-c. An applied magnetic field decreased T-s, leadi
ng to an enhancement of the magnetoresistance between T-s (0) and T-s
(H). The microscopic properties of Mn3+ and Mn4+ ions due to Sr2+ and
Mg2+ substitutions were illustrated by Mn-55 nuclear magnetic resonanc
e study. (C) 1996 American Institute of Physics.