AN OVERVIEW OF BURIED OXIDES ON SILICON - NEW PROCESSES AND RADIATIONEFFECTS

This paper presents a review of the main properties of the two types o f buried oxides that currently dominate the Silicon-On-Insulator (SOI) technologies: SIMOX (Separation by IMplantation of OXygen) and BESOI (Bond and Etch-Back SOI) materials. After examining the main advantage s of SOI structures for radiation-hardened electronics, we present dif ferent advanced technological processes of such buried oxides and revi ew their physical characteristics as well as their charge trapping pro perties under ionizing radiations.