DAMAGE AND DEFECTS FROM LOW-ENERGY IMPLANTS IN SI

Authors
EAGLESHAM DJ AGARWAL A HAYNES TE GOSSMANN HJ JACOBSON DC POATE JM
Citation
Dj. Eaglesham et al., DAMAGE AND DEFECTS FROM LOW-ENERGY IMPLANTS IN SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 1-4
Citations number
21
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
120
Issue
1-4
Year of publication
1996
Pages
1 - 4
Database
ISI
SICI code
0168-583X(1996)120:1-4<1:DADFLI>2.0.ZU;2-B
Abstract
Recent results on extended defect formation after ion implantation are reviewed. Interstitial evaporation from {311} extended defects domina tes transient diffusion over most of the range of temperatures, times, and dopant concentrations of technological interest. The reactions be tween interstitials and impurities are investigated by measuring the e ffect of O, P, B, and C impurities on {311} defects. Interstitial trap s such as B and C exert a strong influence at concentrations > 10(18) cm(-3) Damage and defect formation are characterised for very shallow implants (2-5 keV Si). Even above the amorphisation threshold, stable {311} defects dominate the microstructure, despite the proximity of th e surface.