SN-119 MOSSBAUER-SPECTROSCOPY INVESTIGATION OF HEAVILY P-DOPED SILICON

Authors
VESTERGAARD HC FANCIULLI M LARSEN AN WEYER G FREITAG K
Citation
Hc. Vestergaard et al., SN-119 MOSSBAUER-SPECTROSCOPY INVESTIGATION OF HEAVILY P-DOPED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 33-36
Citations number
10
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
120
Issue
1-4
Year of publication
1996
Pages
33 - 36
Database
ISI
SICI code
0168-583X(1996)120:1-4<33:SMIOHP>2.0.ZU;2-8
Abstract
Utilizing radioactive Sn-119m probe atoms in isoconcentration P-doped silicon, by Sn-119 Mossbauer emission spectroscopy the formation of pr obe atom-vacancy complexes is observed as a function of rapid thermal annealing temperature and doping level. The results are discussed with in the framework of a previously proposed model.