A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING()

Authors
SKORUPA W YANKOV RA REBOHLE L FROB H BOHME T LEO K TYSCHENKO IE KACHURIN GA
Citation
W. Skorupa et al., A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 106-109
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
120
Issue
1-4
Year of publication
1996
Pages
106 - 109
Database
ISI
SICI code
0168-583X(1996)120:1-4<106:ASOTBP>2.0.ZU;2-1
Abstract
Thermal SiO2 films have been implanted with Si+ ions using double-ener gy implants (200 + 100 keV) at a substrate temperature of about -20 de grees C to total doses in the range 1.6 x 10(16)-1.6 x 10(17) cm(-2) f ollowed by short-time thermal processing, in order to form a Si nanost ructure capable of yielding blue photoluminescence (PL). The intensity and the peak position of the PL band have been investigated as a func tion of ion dose, manner of heat treatment, anneal time and anneal tem perature. For the formation of blue PL emitting centres, optimum proce ssing conditions in terms of excess Si concentration and overall therm al budget are mandatory. The nature of the observed blue emission is d iscussed.