ION-BEAM PROCESSING OF SINGLE-CRYSTALLINE SILICON-CARBIDE

Authors
SKORUPA W HEERA V PACAUD Y WEISHART H
Citation
W. Skorupa et al., ION-BEAM PROCESSING OF SINGLE-CRYSTALLINE SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 114-120
Citations number
34
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
120
Issue
1-4
Year of publication
1996
Pages
114 - 120
Database
ISI
SICI code
0168-583X(1996)120:1-4<114:IPOSS>2.0.ZU;2-F
Abstract
A short review is presented concerning problems of ion beam processing of single crystalline silicon carbide. Emphasis is given to recent re sults on point defects, extended defects, amorphisation and recrystall isation, electrical activation of dopant atoms, and metallisation.