HIGH-TEMPERATURE CARBON IMPLANTATION IN SIMOX

The aim of this experiment was to explore the possibility to convert t he Si-overlayer of a SIMOX wafer into 3C-SiC by carbon implantation. I n a first attempt carbon was implanted at a temperature 1030 degrees C and energy 100 keV to a dose of 2.5 x 10(17) C+ cm(-2). The SIMOX was covered by a thick thermal oxide. Cross-section TEM observations on t he implanted specimen reveal that carbon is concentrated mainly at the Si/SiO2 interfaces at the front and back face of the Si-overlayer for ming continuous but highly defected 3C-SiC layers which are in epitaxi al relation with the Si matrix. The implanted carbon has the tendency to migrate from the SiO2 and Si to the SiO2/Si interfaces to form SiC there.