A COMPARATIVE EPR STUDY OF ION-IMPLANTATION INDUCED DAMAGE IN SI, SI1-XGEX(X-NOT-EQUAL-0) AND SIC

Authors
BARKLIE RC
Citation
Rc. Barklie, A COMPARATIVE EPR STUDY OF ION-IMPLANTATION INDUCED DAMAGE IN SI, SI1-XGEX(X-NOT-EQUAL-0) AND SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 139-146
Citations number
28
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
120
Issue
1-4
Year of publication
1996
Pages
139 - 146
Database
ISI
SICI code
0168-583X(1996)120:1-4<139:ACESOI>2.0.ZU;2-L
Abstract
Electron Paramagnetic Resonance (EPR) measurements have been made to i nvestigate the build up of damage in silicon, in relaxed crystalline S i1-xGex (x = 0.04, 0.13, 0.24, 0.36) and in 6H-SiC as a result of incr easing: the ion dose from low levels (similar to 10(12) cm(-2)) up to values(similar to 10(15) cm(-2)) sufficient to produce an amorphous la yer. Si, Si1-xGex (x not equal 0) and SIC were implanted at room tempe rature with 1.5 MeV Si, 2 MeV Si and 0.2 MeV Ge ions respectively. A c omparison is made between the ways in which the type and population of paramagnetic defects depend on ion dose for each material.