MONTE-CARLO SIMULATION OF ION-IMPLANTATION IN CRYSTALLINE SIC

We report first the results of a. simulation study of ion implantation in crystalline 6H-SiC. Calculations were performed with a Monte Carlo code modified to account for the hexagonal lattice structure of the m aterial. After an approximate determination of empirical parameters of electronic energy loss, performed by comparison of simulated profiles with experimental data as reported in the literature, a detailed stud y of the effects of beam-target orientation has been made for a few sp ecific cases. Results have been compared with those of similar simulat ions made in cubic 3C-SiC, where the same model parameters were used, in order to emphasize differences due to the different crystallographi c structure and surface orientation of the two phases. Conditions whic h originate deep channeling tails in the implanted profiles are identi fied, as well as conditions suitable to obtain the minimum width profi le.