ION-BEAM SYNTHESIS AND RECRYSTALLIZATION OF AMORPHOUS SIGE SIC STRUCTURES/

Authors
PEREZRODRIGUEZ A ROMANORODRIGUEZ A SERRE C CALVOBARRIO L CABEZAS R MORANTE JR CALDERER J REUTHER H SKORUPA W
Citation
A. Perezrodriguez et al., ION-BEAM SYNTHESIS AND RECRYSTALLIZATION OF AMORPHOUS SIGE SIC STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 151-155
Citations number
10
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
120
Issue
1-4
Year of publication
1996
Pages
151 - 155
Database
ISI
SICI code
0168-583X(1996)120:1-4<151:ISAROA>2.0.ZU;2-Z
Abstract
Si1-xGex amorphous layers implanted with different doses of carbon (be tween 5 x 10(15) and 2 x 10(17) cm(-2)) and annealed at 700 degrees C and 900 degrees C have been analyzed by Raman and Infrared spectroscop ies, electron microscopy and Auger electron spectroscopy, The obtained data show the synthesis of amorphous SiC by implanting at the highest doses. In these cases, recrystallization only occurs at the highest a nnealing temperature (900 degrees C). The structure of the synthesized SiC strongly depends on the implantation dose, in addition to the ann eal temperature. For the highest dose (2 x 10(17) cm(-2)), crystalline beta-SiC is formed. Finally, a strong migration of Ge towards the Si substrate is observed from the region where SiC precipitation occurs.