RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED RELAXED SI1-XGEX

Authors
LARSEN AN SHIRYAEV SY GAIDUK P TISHKOV VS
Citation
An. Larsen et al., RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 161-164
Citations number
17
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
120
Issue
1-4
Year of publication
1996
Pages
161 - 164
Database
ISI
SICI code
0168-583X(1996)120:1-4<161:RTAOAI>2.0.ZU;2-J
Abstract
The electrical activity and redistribution during rapid thermal anneal ing (RTA) of high concentrations of As implanted into epitaxially grow n, relaxed Si1-xGex for x less than or equal to 0.5 have been studied as a function of composition x and RTA parameters. At a given RTA temp erature the maximum carrier concentration decreases and the redistrubu tion increases with increasing x. Maximum carrier concentrations and j unction depths as a function of composition and RTA parameters are giv en.