2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX

Authors
ORAIFEARTAIGH C BARKLIE RC LARSEN AN PRIOLO F FRANZO G LULLI G BIANCONI M LINDNER JKN CRISTIANO F HEMMENT PLF
Citation
C. Oraifeartaigh et al., 2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 165-168
Citations number
20
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
120
Issue
1-4
Year of publication
1996
Pages
165 - 168
Database
ISI
SICI code
0168-583X(1996)120:1-4<165:2MSIDI>2.0.ZU;2-L
Abstract
The damage produced by implanting, at room temperature, 3 mu m thick r elaxed Si1-xGex layers with 2 MeV Si+ ions has been measured as a func tion of Ge content (x = 0.04, 0.13, 0.24 or 0.36) and Si dose in the d ose range 10(10)-10(15) cm(-2). The accumulation of damage with increa sing dose has been studied as a function of Ge content by Rutherford B ackscattering Spectrometry, Optical Reflectivity Depth Profiling and T ransmission Electron Microscopy and an increased damage efficiency in Si1-xGex with increasing x is observed. The characteristics of implant ation-induced - defects have been investigated by Electron Paramagneti c Resonance. The results are discussed in the context of a model of th e damage process in SiGe.