CHARACTERIZATION OF SI GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS FORMED BY GE ION-IMPLANTATION IN SI/

Epitaxial Si/GexSi1-x heterojunctions were formed by high dose Ge ion implantation in Si followed by rapid thermal annealing at 1000 degrees C for 10 s. This technique was adopted to fabricate Si/GexSi1-x heter ojunction n-p-n bipolar transistors (HBT) using a self-aligned, double polycrystalline silicon process commonly used for fast Si bipolar tra nsistors. The devices are characterized by a 60 nm wide neutral base w ith a Ge concentration peak of approximate to 7 at.% at the base-colle ctor junction. Good static and dynamic electrical characteristics are demonstrated and discussed.